高压MOSFET

产品型号	Mode	VDS(MIN)	VGS	ID(MAx)	RDS(on) (MAx)	封装形式
LY1N60	N channel	600V	±30V	1A	9.3Ω	TO92/TO126/TO251
LY2N60	N channel	600V	±30V	2A	4.7Ω	TO251/TO252/TO251
LY4N60	N channel	600V	±30V	4A	2.6Ω	TO251/TO252/TO251
LY7N60	N channel	600V	±30V	7A	1.4Ω	TO220F
LY8N60	N channel	600V	±30V	8A	1.2Ω	TO220F
LY10N60	N channel	600V	±30V	10A	0.8Ω	TO220F
LY12N60	N channel	600V	±30V	12A	0.7Ω	TO220F
LY13003	BJT	700V		1.5A		TO126/TO92
LY1N65	N channel	650V	±30V	1A	11Ω	TO92/TO126/TO251
LY2N65	N channel	650V	±30V	2A	5Ω	TO251/TO252/TO251
LY4N65	N channel	650V	±30V	4A	2.9Ω	TO251/TO252/TO251
LY7N65	N channel	650V	±30V	7A	1.4Ω	TO220F
LY8N65	N channel	650V	±30V	8A	1.6Ω	TO220F
LY10N65	N channel	650V	±30V	10A	0.85Ω	TO220F
LY12N65	N channel	650V	±30V	12A	0.75Ω	TO220F

产品应用 ①电池充电器②电源适配器③交流电LED照明驱动④小家控制板